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Transistors - Bipolar -Pre-Biased
EMF22T2R Picture

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EMF22T2R

  • Rohm Semiconductor
  • New
  • TRANS NPN PREBIAS/NPN 0.15W EMT6
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In Stock:18,670(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Tape & Reel (TR)
Transistor Type
1 NPN Pre-Biased, 1 NPN
Current - Collector (Ic) (Max)
100mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
50V, 12V
Resistor - Base (R1)
10kOhms
Resistor - Emitter Base (R2)
10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 5mA, 5V / 270 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
250MHz, 320MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
EMT6
Other
Price advantage, EMF22T2R is available in stock and can be delivered on the same day
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