NE85619-T1 spot_Original genuine_CEL_Transistors - Bipolar

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	4.5GHz
Noise Figure (dB Typ @ f)	1.4dB ~ 2.2dB @ 1GHz ~ 2GHz
Gain	6.5dB ~ 12.5dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 20mA, 10V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-523
Supplier Device Package	SOT-523

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Price advantage, NE85619-T1 is available in stock and can be delivered on the same day

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