NE68819-A spot_Original genuine_CEL_Transistors - Bipolar

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	6V
Frequency - Transition	5GHz
Noise Figure (dB Typ @ f)	1.7dB ~ 2.5dB @ 2GHz
Gain	-
Power - Max	125mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 3mA, 1V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-523
Supplier Device Package	3-SuperMiniMold (19)

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Price advantage, NE68819-A is available in stock and can be delivered on the same day

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