NE68133-T1B-R34-A spot_Original genuine_CEL_Transistors - Bipolar

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	10V
Frequency - Transition	9GHz
Noise Figure (dB Typ @ f)	1.2dB @ 1GHz
Gain	13dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 20mA, 8V
Current - Collector (Ic) (Max)	65mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23

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Price advantage, NE68133-T1B-R34-A is available in stock and can be delivered on the same day

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