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Transistors - Bipolar - RF
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MDS1100

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In Stock:17,730(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
65V
Frequency - Transition
1.03GHz
Noise Figure (dB Typ @ f)
-
Gain
8.9dB
Power - Max
8750W
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 5A, 5V
Current - Collector (Ic) (Max)
100A
Operating Temperature
200°C (TJ)
Mounting Type
Surface Mount
Package / Case
55TU-1
Supplier Device Package
55TU-1
Other
Price advantage, MDS1100 is available in stock and can be delivered on the same day
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