NE664M04-A spot_Original genuine_CEL_Transistors - Bipolar

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5V
Frequency - Transition	20GHz
Noise Figure (dB Typ @ f)	-
Gain	12dB
Power - Max	735mW
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 100mA, 3V
Current - Collector (Ic) (Max)	500mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-343F
Supplier Device Package	SOT-343F

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Price advantage, NE664M04-A is available in stock and can be delivered on the same day

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