2N5031 spot_Original genuine_Microsemi Corporation_Transistors - Bipolar

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	10V
Frequency - Transition	400MHz
Noise Figure (dB Typ @ f)	-
Gain	12dB @ 400MHz
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 1mA, 6V
Current - Collector (Ic) (Max)	20mA
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-206AF, TO-72-4 Metal Can
Supplier Device Package	TO-72

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Price advantage, 2N5031 is available in stock and can be delivered on the same day

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