EC4H09C-TL-H spot_Original genuine_ON Semiconductor_Transistors - Bipolar

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	3.5V
Frequency - Transition	26GHz
Noise Figure (dB Typ @ f)	1.3dB @ 2GHz
Gain	15dB
Power - Max	120mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 5mA, 1V
Current - Collector (Ic) (Max)	40mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	4-UFDFN
Supplier Device Package	4-ECSP1008

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Price advantage, EC4H09C-TL-H is available in stock and can be delivered on the same day

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