NE85630-T1 spot_Original genuine_CEL_Transistors - Bipolar

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	4.5GHz
Noise Figure (dB Typ @ f)	1.3dB ~ 2.2dB @ 1GHz ~ 2GHz
Gain	6dB ~ 12dB
Power - Max	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 7mA, 3V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	SOT-323

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Price advantage, NE85630-T1 is available in stock and can be delivered on the same day

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