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Transistors - Bipolar - Single
2SD667-D-AP Picture

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2SD667-D-AP

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In Stock:17,706(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Tape & Box (TB)
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 150mA, 5V
Power - Max
900 mW
Frequency - Transition
140MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package
TO-92MOD
Other
Price advantage, 2SD667-D-AP is available in stock and can be delivered on the same day
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