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Transistors - Bipolar - Pre-Biased
PDTD123EK,115 Picture

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PDTD123EK,115

  • NXP USA Inc.
  • New
  • TRANS PREBIAS NPN 250MW SMT3
  • Datasheet download
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In Stock:19,254(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Tape & Reel (TR)
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
2.2 kOhms
Resistor - Emitter Base (R2)
2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
-
Power - Max
250 mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SMT3; MPAK
Other
Price advantage, PDTD123EK,115 is available in stock and can be delivered on the same day
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