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DF23MR12W1M1B11BOMA1 Picture

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DF23MR12W1M1B11BOMA1

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In Stock:19,352(Ref. price)
Qty.Unit PriceExt. Price
1
$82.61400
$82.61400
Documents
Specifications
DescriptionDetails
Series
*
Package
Bulk
FET Type
2 N-Channel (Dual)
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
25A
Rds On (Max) @ Id, Vgs
45mOhm @ 25A, 15V
Vgs(th) (Max) @ Id
5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
620nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
2000pF @ 800V
Power - Max
20mW
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Other
Price advantage, DF23MR12W1M1B11BOMA1 is available in stock and can be delivered on the same day
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