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MSCSM120AM042CD3AG

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In Stock:3,120(Ref. price)
Qty.Unit PriceExt. Price
1
$864.04799
$864.04799
Documents
Specifications
DescriptionDetails
Series
-
Package
Box
FET Type
2 N Channel (Phase Leg)
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
495A (Tc)
Rds On (Max) @ Id, Vgs
5.2mOhm @ 240A, 20V
Vgs(th) (Max) @ Id
2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs
1392nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
18.1pF @ 1000V
Power - Max
2.031kW (Tc)
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
D3
Other
Price advantage, MSCSM120AM042CD3AG is available in stock and can be delivered on the same day
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