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SIA938DJT-T1-GE3 Picture

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SIA938DJT-T1-GE3

  • Vishay Siliconix
  • New
  • DUAL N-CHANNEL 20-V (D-S) MOSFET
  • Datasheet download
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In Stock:7,006(Ref. price)
Qty.Unit PriceExt. Price
1
$0.67200
$0.67200
Documents
Specifications
DescriptionDetails
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
2 N-Channel (Dual)
FET Feature
Standard
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
4.5A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs
21.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
425pF @ 10V
Power - Max
1.9W (Ta), 7.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® SC-70-6 Dual
Supplier Device Package
PowerPAK® SC-70-6 Dual
Other
Price advantage, SIA938DJT-T1-GE3 is available in stock and can be delivered on the same day
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