SIZF906ADT-T1-GE3 spot_Original genuine_Vishay Siliconix_MOSFETs

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET® Gen IV
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual), Schottky
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs	3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	49nC @ 10V, 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 15V, 8200pF @ 15V
Power - Max	4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Supplier Device Package	8-PowerPair® (6x5)

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