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APTM10DHM09T3G Picture

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APTM10DHM09T3G

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In Stock:19,256(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
POWER MOS V®
Package
Bulk
FET Type
2 N-Channel (Dual) Asymmetrical
FET Feature
Standard
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
139A
Rds On (Max) @ Id, Vgs
10mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id
4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
9875pF @ 25V
Power - Max
390W
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP3
Supplier Device Package
SP3
Other
Price advantage, APTM10DHM09T3G is available in stock and can be delivered on the same day
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