IXFX160N30T spot_Original genuine_IXYS_MOSFETs

MOSFETs - Single

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PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

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In Stock：20,740(Ref. price)

Qty.	Unit Price	Ext. Price
1	$15.14100	$15.14100

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Specifications

Description	Details
Series	GigaMOS™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	300 V
Current - Continuous Drain (Id) @ 25°C	160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	19mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	335 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	28000 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1390W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PLUS247™-3
Package / Case	TO-247-3

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Price advantage, IXFX160N30T is available in stock and can be delivered on the same day

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