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SI2308BDS-T1-E3 Picture

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SI2308BDS-T1-E3

  • Vishay Siliconix
  • New
  • MOSFET N-CH 60V 2.3A SOT23-3
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In Stock:1,277(Ref. price)
Qty.Unit PriceExt. Price
1
$0.48450
$0.48450
Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
156mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.8 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
190 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
1.09W (Ta), 1.66W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3
Other
Price advantage, SI2308BDS-T1-E3 is available in stock and can be delivered on the same day
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