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SI4823DY-T1-GE3 Picture

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SI4823DY-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET P-CH 20V 4.1A 8SO
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In Stock:20,022(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
LITTLE FOOT®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
108mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
660 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
1.7W (Ta), 2.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Other
Price advantage, SI4823DY-T1-GE3 is available in stock and can be delivered on the same day
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