NTHS2101PT1G spot_Original genuine_ON Semiconductor_MOSFETs

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8 V
Current - Continuous Drain (Id) @ 25°C	5.4A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	25mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	2400 pF @ 6.4 V
FET Feature	-
Power Dissipation (Max)	1.3W (Ta)
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	ChipFET™
Package / Case	8-SMD, Flat Lead

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