IXTP3N100P spot_Original genuine_IXYS_MOSFETs

MOSFETs - Single

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PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

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In Stock：20,106(Ref. price)

Qty.	Unit Price	Ext. Price
1	$2.45362	$2.45362

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Specifications

Description	Details
Series	PolarVHV™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

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Price advantage, IXTP3N100P is available in stock and can be delivered on the same day

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