IXTH110N10L2 spot_Original genuine_IXYS_MOSFETs

MOSFETs - Single

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In Stock：17,792(Ref. price)

Qty.	Unit Price	Ext. Price
1	$15.16110	$15.16110

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Specifications

Description	Details
Series	Linear L2™
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	18mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	260 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10500 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	600W (Tc)
Operating Temperature	-
Mounting Type	Through Hole
Supplier Device Package	TO-247 (IXTH)
Package / Case	TO-247-3

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Price advantage, IXTH110N10L2 is available in stock and can be delivered on the same day

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