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SI5480DU-T1-GE3 Picture

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SI5480DU-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET N-CH 30V 12A PPAK
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In Stock:17,900(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
16mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1230 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 31W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® ChipFet Single
Package / Case
PowerPAK® ChipFET™ Single
Other
Price advantage, SI5480DU-T1-GE3 is available in stock and can be delivered on the same day
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