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IPC302N20NFDX1SA1

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In Stock:7,540(Ref. price)
Qty.Unit PriceExt. Price
1
$3.39150
$3.39150
Documents
Specifications
DescriptionDetails
Series
OptiMOS™
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
1A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
Sawn on foil
Package / Case
Die
Other
Price advantage, IPC302N20NFDX1SA1 is available in stock and can be delivered on the same day
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