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NTMSD2P102LR2G Picture

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NTMSD2P102LR2G

  • ON Semiconductor
  • New
  • MOSFET P-CH 20V 2.3A 8SOIC
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In Stock:19,708(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
FETKY™
Package
Tape & Reel (TR)
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
90mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 4.5 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
750 pF @ 16 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
710mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Other
Price advantage, NTMSD2P102LR2G is available in stock and can be delivered on the same day
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