TPC8109(TE12L) spot_Original genuine_Toshiba Semiconductor and Storage_MOSFETs

MOSFETs - Single

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Specifications

Description	Details
Series	*
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	20mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	2260 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	8-SOP (5.5x6.0)
Package / Case	8-SOIC (0.173", 4.40mm Width)

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Price advantage, TPC8109(TE12L) is available in stock and can be delivered on the same day

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