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NTMSD2P102R2 Picture

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NTMSD2P102R2

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In Stock:2,778(Ref. price)
Qty.Unit PriceExt. Price
1
$0.18240
$0.18240
Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
90mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 4.5 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
750 pF @ 16 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Other
Price advantage, NTMSD2P102R2 is available in stock and can be delivered on the same day
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