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MOSFETs - Single
RM47N650T7 Picture

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RM47N650T7

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In Stock:1,001,878(Ref. price)
Qty.Unit PriceExt. Price
1
$3.07800
$3.07800
Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
47A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
81mOhm @ 15.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3111.9 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
417W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Other
Price advantage, RM47N650T7 is available in stock and can be delivered on the same day
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