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UPA2680T1E-E2-AT Picture

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UPA2680T1E-E2-AT

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In Stock:564,304(Ref. price)
Qty.Unit PriceExt. Price
1
$0.53900
$0.53900
Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
50mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.1 nC @ 4.5 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
190 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
6-MLP (3x3)
Package / Case
6-VDFN Exposed Pad
Other
Price advantage, UPA2680T1E-E2-AT is available in stock and can be delivered on the same day
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