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IXTA08N100D2HV Picture

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IXTA08N100D2HV

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  • MOSFET N-CH 1000V 800MA TO263HV
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In Stock:19,814(Ref. price)
Qty.Unit PriceExt. Price
1
$2.09088
$2.09088
Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
800mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)
0V
Rds On (Max) @ Id, Vgs
21Ohm @ 400mA, 0V
Vgs(th) (Max) @ Id
4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
14.6 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
325 pF @ 25 V
FET Feature
Depletion Mode
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263HV
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other
Price advantage, IXTA08N100D2HV is available in stock and can be delivered on the same day
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