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MOSFETs - Single
NTH4L020N120SC1 Picture

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NTH4L020N120SC1

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  • TRANS SJT N-CH 1200V 102A TO247
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In Stock:19,897(Ref. price)
Qty.Unit PriceExt. Price
1
$31.36010
$31.36010
Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
102A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id
4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
220 nC @ 20 V
Vgs (Max)
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
2943 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
510W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4
Other
Price advantage, NTH4L020N120SC1 is available in stock and can be delivered on the same day
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