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MOSFETs - Single
TK20E60W,S1VX Picture

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TK20E60W,S1VX

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In Stock:18,560(Ref. price)
Qty.Unit PriceExt. Price
1
$4.25673
$4.25673
Documents
Specifications
DescriptionDetails
Series
DTMOSIV
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
155mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1680 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
165W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Other
Price advantage, TK20E60W,S1VX is available in stock and can be delivered on the same day
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