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SISS52DN-T1-GE3 Picture

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SISS52DN-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET N-CH 30V 47.1A/162A PPAK
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In Stock:16,918(Ref. price)
Qty.Unit PriceExt. Price
1
$1.05450
$1.05450
Documents
Specifications
DescriptionDetails
Series
TrenchFET® Gen V
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
47.1A (Ta), 162A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Vgs (Max)
+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds
2950 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
4.8W (Ta), 57W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8SH
Package / Case
PowerPAK® 1212-8SH
Other
Price advantage, SISS52DN-T1-GE3 is available in stock and can be delivered on the same day
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