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SIE830DF-T1-GE3 Picture

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SIE830DF-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET N-CH 30V 50A 10POLARPAK
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In Stock:19,844(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
WFET®
Package
Tape & Reel (TR)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.2mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
115 nC @ 10 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
5500 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
5.2W (Ta), 104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
10-PolarPAK® (S)
Package / Case
10-PolarPAK® (S)
Other
Price advantage, SIE830DF-T1-GE3 is available in stock and can be delivered on the same day
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