GA50JT12-247 spot_Original genuine_GeneSiC Semiconductor_MOSFETs

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：1,828(Ref. price)

Qty.	Unit Price	Ext. Price
1	$96.03970	$96.03970

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tube
FET Type	-
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	25mOhm @ 50A
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	7209 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	583W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AB
Package / Case	TO-247-3

Other

Price advantage, GA50JT12-247 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
IPS65R400CEAKMA1	Infineon Technologies	MOSFETs - Single	Datasheet	IPS65R400 - 650V AND 700V COOLMO	$0.35890	In Stock:3912
SIA453EDJ-T1-GE3	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET P-CH 30V 24A PPAK SC70-6	No price	In Stock:17794
STL7N80K5	STMicroelectronics	MOSFETs - Single	Datasheet	MOSFET N-CH 800V 3.6A POWERFLAT	$1.93920	In Stock:12007
IPP80N04S3H4AKSA1	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 40V 80A TO220-3	No price	In Stock:17798
FCP190N65S3R0	ON Semiconductor	MOSFETs - Single	Datasheet	MOSFET N-CH 650V 17A TO220-3	$1.35126	In Stock:17800