RM8N650LD spot_Original genuine_Rectron USA_MOSFETs

MOSFETs - Single

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In Stock：19,564(Ref. price)

Qty.	Unit Price	Ext. Price
1	$0.50440	$0.50440

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	540mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	680 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	80W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252-2
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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