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SIA416DJ-T1-GE3 Picture

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SIA416DJ-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET N-CH 100V 11.3A PPAK
  • Datasheet download
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In Stock:10,016(Ref. price)
Qty.Unit PriceExt. Price
1
$0.73260
$0.73260
Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
83mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
295 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3.5W (Ta), 19W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SC-70-6 Single
Package / Case
PowerPAK® SC-70-6
Other
Price advantage, SIA416DJ-T1-GE3 is available in stock and can be delivered on the same day
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