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SISS08DN-T1-GE3 Picture

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SISS08DN-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET N-CH 25V 53.9/195.5A PPAK
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In Stock:5,672(Ref. price)
Qty.Unit PriceExt. Price
1
$1.14000
$1.14000
Documents
Specifications
DescriptionDetails
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
53.9A (Ta), 195.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.23mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
82 nC @ 10 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
3670 pF @ 12.5 V
FET Feature
-
Power Dissipation (Max)
5W (Ta), 65.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8S (3.3x3.3)
Package / Case
PowerPAK® 1212-8S
Other
Price advantage, SISS08DN-T1-GE3 is available in stock and can be delivered on the same day
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