CSD19501KCS spot_Original genuine_Texas Instruments_MOSFETs

MOSFETs - Single

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PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

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In Stock：1,896(Ref. price)

Qty.	Unit Price	Ext. Price
1	$2.17560	$2.17560

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Specifications

Description	Details
Series	NexFET™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	6.6mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3980 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	217W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3

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