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SCH2080KEC Picture

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SCH2080KEC

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In Stock:3,806(Ref. price)
Qty.Unit PriceExt. Price
1
$38.81940
$38.81940
Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
117mOhm @ 10A, 18V
Vgs(th) (Max) @ Id
4V @ 4.4mA
Gate Charge (Qg) (Max) @ Vgs
106 nC @ 18 V
Vgs (Max)
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds
1850 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
262W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Other
Price advantage, SCH2080KEC is available in stock and can be delivered on the same day
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