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MOSFETs - Single
RJK1002DPN-E0#T2 Picture

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RJK1002DPN-E0#T2

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In Stock:18,974(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
70A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7.6mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
94 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6450 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Other
Price advantage, RJK1002DPN-E0#T2 is available in stock and can be delivered on the same day
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