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MOSFETs - Single
STY80NM60N Picture

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STY80NM60N

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In Stock:19,290(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
MDmesh™ II
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
74A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
35mOhm @ 37A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
360 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
10100 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
447W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
MAX247™
Package / Case
TO-247-3
Other
Price advantage, STY80NM60N is available in stock and can be delivered on the same day
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