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G3R20MT17N

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In Stock:20,732(Ref. price)
Qty.Unit PriceExt. Price
1
$108.30720
$108.30720
Documents
Specifications
DescriptionDetails
Series
G3R™
Package
Tube
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
26mOhm @ 75A, 15V
Vgs(th) (Max) @ Id
2.7V @ 15mA
Gate Charge (Qg) (Max) @ Vgs
400 nC @ 15 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
10187 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
523W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227
Package / Case
SOT-227-4, miniBLOC
Other
Price advantage, G3R20MT17N is available in stock and can be delivered on the same day
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