FZ400R65KE3NOSA1 spot_Original genuine_Infineon Technologies_Transistors - IGBTs

Transistors - IGBTs - Modules

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：20,598(Ref. price)

Qty.	Unit Price	Ext. Price
1	$2009.90797	$2009.90797

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tray
IGBT Type	-
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	6500 V
Current - Collector (Ic) (Max)	800 A
Power - Max	8350 W
Vce(on) (Max) @ Vge, Ic	3.4V @ 15V, 400A
Current - Collector Cutoff (Max)	5 mA
Input Capacitance (Cies) @ Vce	110 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-50°C ~ 125°C
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

Other

Price advantage, FZ400R65KE3NOSA1 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
FF150R12KE3GB2HOSA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE VCES 1200V 150A	$105.42609	In Stock:17660
APTGT150A120T3AG	Microchip Technology	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 1200V 220A 833W SP3	$114.63360	In Stock:17662
FP10R06W1E3BOMA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 600V 16A 68W	$30.57100	In Stock:799
APTGV50H60BT3G	Microsemi Corporation	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 600V 65A 250W SP3	No price	In Stock:17668
BSM300GA120DLCHOSA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	INSULATED GATE BIPOLAR TRANSISTO	$139.59120	In Stock:873