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Transistors - IGBTs - Modules
BSM150GB170DN2HOSA1 Picture

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BSM150GB170DN2HOSA1

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In Stock:18,004(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Tray
IGBT Type
-
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (Max)
1700 V
Current - Collector (Ic) (Max)
220 A
Power - Max
1250 W
Vce(on) (Max) @ Vge, Ic
3.9V @ 15V, 150A
Current - Collector Cutoff (Max)
1.5 mA
Input Capacitance (Cies) @ Vce
20 nF @ 25 V
Input
Standard
NTC Thermistor
No
Operating Temperature
150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Other
Price advantage, BSM150GB170DN2HOSA1 is available in stock and can be delivered on the same day
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