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Transistors - IGBTs - Single
NGTB15N135IHRWG Picture

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NGTB15N135IHRWG

  • ON Semiconductor
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  • INSULATED GATE BIPOLAR TRANSISTO
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In Stock:5,130(Ref. price)
Qty.Unit PriceExt. Price
1
$1.94750
$1.94750
Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
IGBT Type
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)
1.35 V
Current - Collector (Ic) (Max)
30 A
Current - Collector Pulsed (Icm)
60 A
Vce(on) (Max) @ Vge, Ic
2.65V @ 15V, 15A
Power - Max
357 W
Switching Energy
420µJ (off)
Input Type
Standard
Gate Charge
156 nC
Td (on/off) @ 25°C
-/170ns
Test Condition
600V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr)
-
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247
Other
Price advantage, NGTB15N135IHRWG is available in stock and can be delivered on the same day
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