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Transistors - IGBTs - Single
HGT1S12N60A4DS Picture

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HGT1S12N60A4DS

  • ON Semiconductor
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  • IGBT 600V 54A 167W D2PAK
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In Stock:18,754(Ref. price)
Qty.Unit PriceExt. Price
1
$4.13520
$4.13520
Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
54 A
Current - Collector Pulsed (Icm)
96 A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 12A
Power - Max
167 W
Switching Energy
55µJ (on), 50µJ (off)
Input Type
Standard
Gate Charge
78 nC
Td (on/off) @ 25°C
17ns/96ns
Test Condition
390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr)
30 ns
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263AB
Other
Price advantage, HGT1S12N60A4DS is available in stock and can be delivered on the same day
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