GPA030A135MN-FDR spot_Original genuine_SemiQ_Transistors - IGBTs

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1350 V
Current - Collector (Ic) (Max)	60 A
Current - Collector Pulsed (Icm)	90 A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 30A
Power - Max	329 W
Switching Energy	4.4mJ (on), 1.18mJ (off)
Input Type	Standard
Gate Charge	300 nC
Td (on/off) @ 25°C	30ns/145ns
Test Condition	600V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr)	450 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3
Supplier Device Package	TO-3PN

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Price advantage, GPA030A135MN-FDR is available in stock and can be delivered on the same day

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