Hello! Welcome to Pushiny Chips Mall Sign in Register

Catalogues

Memory
IS61NLP25636A-200B3I-TR Picture

The picture is for reference only

  • Share:

IS61NLP25636A-200B3I-TR

Please fill in the inquiry information for purchasing and consulting products
PartName*Quantity*Batch NumberPackageManufacturerOther requirements
Please fill in the contact details and reply to you in 3 minutes
  • *Name:
  • *Tel:
  • QQ:
  • *Email:
In Stock:17,762(Ref. price)
Qty.Unit PriceExt. Price
No price, please contact inquiry
Documents
Specifications
DescriptionDetails
Series
-
Package
Tape & Reel (TR)
Memory Type
Volatile
Memory Format
SRAM
Technology
SRAM - Synchronous, SDR
Memory Size
9Mb (256K x 36)
Memory Interface
Parallel
Clock Frequency
200 MHz
Write Cycle Time - Word, Page
-
Access Time
3.1 ns
Voltage - Supply
3.135V ~ 3.465V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
165-TFBGA
Supplier Device Package
165-TFBGA (13x15)
Other
Price advantage, IS61NLP25636A-200B3I-TR is available in stock and can be delivered on the same day
Recommended Product
Product PicturesPart NoManufacturerProduct CategoryDatasheetDescriptionReference priceQuantity
Memory
IC SRAM 18MBIT PARALLEL 119PBGA
$29.97989
In Stock:17740
Memory
IC EEPROM 2KBIT I2C 8MINI MAP
$0.19950
In Stock:17742
Memory
IC DRAM 512MBIT PAR 54TSOP II
$14.49600
In Stock:2318
Memory
IC DRAM 1GBIT PARALLEL 96TWBGA
No price
In Stock:17746
Memory
IC EEPROM 1MBIT I2C 1MHZ 8WLCSP
$1.59740
In Stock:17748
  • One-stop shop
  • Authentic guarantee
  • Price advantage
  • Quick delivery

ShenZhen Pushiny Electronics Technology Co., Ltd

Tel: +86-0755-82764386

Mobile phone: +86-18926754196

Fax: 83987343

Email: mona@pushiny.com

Q Q:

Company Address: 4501a, 45 / F, Huaqiang North SEG Plaza, Futian District, Shenzhen, Guangdong, China


Wechat

Copyright © 2010-2022 Pushiny Chips Mall pay